IRF840LCLPBF

IRF840LCLPBF图片1
IRF840LCLPBF图片2
IRF840LCLPBF概述

功率MOSFET Power MOSFET

DESCRIPTION

This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS low charge device Power MOSFETs technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings. In addition, reduced switching losses and improved efficiency are achievable in a variety of high frequency applications. Frequencies of a few MHz at high current are possible using the new low charge Power MOSFETs.

These device improvements combined with the proven ruggedness and reliability that characterize Power MOSFETs offer the designer a new power transistor standard for switching applications.

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition

• Ultra Low Gate Charge

• Reduced Gate Drive Requirement

• Enhanced 30 V VGS Rating

• Reduced Ciss, Coss, Crss

• Extremely High Frequency Operation

• Repetitive Avalanche Rated

• Compliant to RoHS Directive 2002/95/EC

IRF840LCLPBF中文资料参数规格
技术参数

极性 N-Channel

漏源极电压Vds 500 V

连续漏极电流Ids 8.00 A

上升时间 25 ns

下降时间 19 ns

封装参数

安装方式 Through Hole

封装 TO-262-3

外形尺寸

长度 10.67 mm

宽度 4.83 mm

高度 9.65 mm

封装 TO-262-3

物理参数

工作温度 -55℃ ~ 150℃

其他

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

数据手册

在线购买IRF840LCLPBF
型号: IRF840LCLPBF
描述:功率MOSFET Power MOSFET

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