IRF840LCSPBF

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IRF840LCSPBF概述

功率MOSFET Power MOSFET

DESCRIPTION

This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS low charge device Power MOSFETs technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings. In addition, reduced switching losses and improved efficiency are achievable in a variety of high frequency applications. Frequencies of a few MHz at high current are possible using the new low charge Power MOSFETs.

These device improvements combined with the proven ruggedness and reliability that characterize Power MOSFETs offer the designer a new power transistor standard for switching applications.

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition

• Ultra Low Gate Charge

• Reduced Gate Drive Requirement

• Enhanced 30 V VGS Rating

• Reduced Ciss, Coss, Crss

• Extremely High Frequency Operation

• Repetitive Avalanche Rated

• Compliant to RoHS Directive 2002/95/EC

IRF840LCSPBF中文资料参数规格
技术参数

额定电流 8.00 A

极性 N-Channel

漏源极电压Vds 500 V

漏源击穿电压 500 V

连续漏极电流Ids 8.00 A

上升时间 25 ns

下降时间 19 ns

封装参数

安装方式 Surface Mount

封装 TO-263-3

外形尺寸

宽度 9.65 mm

封装 TO-263-3

物理参数

工作温度 -55℃ ~ 150℃

其他

包装方式 Tube

符合标准

RoHS标准 Non-Compliant

数据手册

在线购买IRF840LCSPBF
型号: IRF840LCSPBF
描述:功率MOSFET Power MOSFET

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