功率MOSFET Power MOSFET
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount IRLR120/SiHLR120
• Straight Lead IRLU120/SiHLU120
• Available in Tape and Reel
• Logic-Level Gate Drive
•RDSonSpecified at VGS= 4 V and 5 V
• Lead Pb-free Available
艾睿:
Trans MOSFET N-CH 100V 7.7A 3-Pin2+Tab DPAK T/R
安装方式 Surface Mount
封装 TO-252-3
封装 TO-252-3
Packaging Reel
Unit-Weight 0.050717 oz
Mounting-Style SMD/SMT
Package-Case TO-252-3
Technology Si
Number-of-Channels 1 Channel
Configuration Single
Transistor-Type 1 N-Channel
Pd-Power-Dissipation 2.5 W
Maximum-Operating-Temperature \+ 150 C
Minimum-Operating-Temperature \- 55 C
Fall-Time 27 ns
Rise-Time 64 ns
Vgs-Gate-Source-Voltage 10 V
Id-Continuous-Drain-Current 7.7 A
Vds-Drain-Source-Breakdown-Voltage 100 V
Rds-On-Drain-Source-Resistance 270 mOhms
Transistor-Polarity N-Channel
Typical-Turn-Off-Delay-Time 21 ns
Typical-Turn-On-Delay-Time 9.8 ns
Channel-Mode Enhancement