IRFI740G

功率MOSFET Power MOSFET

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

FEATURES

• Isolated Package

• High Voltage Isolation = 2.5 kVRMS t = 60 s; f = 60 Hz

• Sink to Lead Creepage Distance = 4.8 mm

• Dynamic dV/dt Rating

• Low Thermal Resistance

• Lead Pb-free Available

艾睿:
Trans MOSFET N-CH 400V 5.4A 3-Pin3+Tab TO-220FP