VISHAY IRFL214PBF. 晶体管, MOSFET, N沟道, 790 mA, 250 V, 2 ohm, 10 V, 4 V
The is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heat sinking. Power dissipation of greater than 1.25W is possible in a typical surface-mount application.
针脚数 3
漏源极电阻 2 Ω
极性 N-Channel
耗散功率 3.1 W
阈值电压 4 V
输入电容 140pF @25V
漏源极电压Vds 250 V
漏源击穿电压 250 V
连续漏极电流Ids 790 mA
工作温度Max 150 ℃
工作温度Min -55 ℃
安装方式 Surface Mount
引脚数 3
封装 SOT-223
长度 6.7 mm
高度 1.8 mm
封装 SOT-223
工作温度 -55℃ ~ 150℃
包装方式 Tube
制造应用 Power Management, Industrial
RoHS标准 RoHS Compliant
含铅标准 Lead Free