INFINEON IPP037N08N3 G. 晶体管, MOSFET, N沟道, 100 A, 80 V, 3.1 mohm, 10 V, 2.8 V
The is a 80V N-channel Power MOSFET that offers highly efficient solutions for power generation e.g. solar micro inverter, power supply e.g. server and telecom and power consumption e.g. electric vehicle. The OptiMOS™ MOSFET offers industry"s lowest RDS on within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.
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- Dual sided cooling
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- Low parasitic inductance
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- Low profile <0.7mm
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- Reduced switching and conduction losses
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- Superior thermal resistance
针脚数 3
漏源极电阻 0.0031 Ω
极性 N-Channel
耗散功率 214 W
阈值电压 2.8 V
漏源极电压Vds 80 V
上升时间 79 ns
输入电容Ciss 8110pF @40VVds
额定功率Max 214 W
下降时间 14 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 214000 mW
安装方式 Through Hole
引脚数 3
封装 TO-220-3
封装 TO-220-3
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Tube
制造应用 电机驱动与控制, 电源管理, 计算机和计算机周边, 通信与网络, 发光二极管照明, Consumer Electronics, LED Lighting, Communications & Networking, 消费电子产品, Power Management, Motor Drive & Control, 替代能源, Computers & Computer Peripherals, Alternative Energy
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IPP037N08N3 G Infineon 英飞凌 | 当前型号 | 当前型号 |
IRFB3077PBF 英飞凌 | 类似代替 | IPP037N08N3 G和IRFB3077PBF的区别 |
IPP037N08N3GXKSA1 英飞凌 | 类似代替 | IPP037N08N3 G和IPP037N08N3GXKSA1的区别 |