DPAK N-CH 55V 30A
表面贴装型 N 通道 30A(Tc) 68W(Tc) PG-TO252-3
得捷:
MOSFET N-CH 55V 30A TO252-3
艾睿:
As an alternative to traditional transistors, the IPD26N06S2L35ATMA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 68000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
Verical:
Trans MOSFET N-CH 55V 30A Automotive 3-Pin2+Tab DPAK T/R
极性 N-CH
耗散功率 68 W
漏源极电压Vds 55 V
连续漏极电流Ids 30A
上升时间 18 ns
输入电容Ciss 621pF @25VVds
下降时间 11 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 68W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
封装 TO-252-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Discontinued at Digi-Key
包装方式 Tape & Reel TR
RoHS标准
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
IPD26N06S2L35ATMA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
IPD26N06S2L35ATMA2 英飞凌 | 完全替代 | IPD26N06S2L35ATMA1和IPD26N06S2L35ATMA2的区别 |