INTEGRATED SILICON SOLUTION ISSI IS61WV102416BLL-10MLI 芯片, 存储器, SRAM, 16MB, 10NS, 48BGA
The is a 16Mb high-speed static RAMs organized as 1024Kwords by 16 bits. It is fabricated using ISSI"s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CE is HIGH deselected, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable WE controls both writing and reading of the memory. A data byte allows Upper Byte UB and Lower Byte LB access.
电源电压DC 3.30 V, 3.60 V max
针脚数 48
位数 16
存取时间 10 ns
内存容量 2000000 B
存取时间Max 10 ns
工作温度Max 85 ℃
工作温度Min -40 ℃
电源电压 2.4V ~ 3.6V
电源电压Max 3.6 V
电源电压Min 2.4 V
安装方式 Surface Mount
引脚数 48
封装 BGA-48
封装 BGA-48
工作温度 -40℃ ~ 85℃
产品生命周期 Active
包装方式 Tray
制造应用 Industrial, 工业, 车用, Automotive
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
IS61WV102416BLL-10MLI Integrated Silicon SolutionISSI | 当前型号 | 当前型号 |
IS61WV102416BLL-10MI Integrated Silicon SolutionISSI | 完全替代 | IS61WV102416BLL-10MLI和IS61WV102416BLL-10MI的区别 |
IS61WV102416BLL-10MLI-TR Integrated Silicon SolutionISSI | 类似代替 | IS61WV102416BLL-10MLI和IS61WV102416BLL-10MLI-TR的区别 |
CY62167DV30LL-55BVI 赛普拉斯 | 功能相似 | IS61WV102416BLL-10MLI和CY62167DV30LL-55BVI的区别 |