100V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Benefits
Low Gate-to-Drain Charge to Reduce Switching Losses
Fully Characterized Capacitance Including Effective COSSto Simplify Design,
Fully Characterized Avalanche Voltage and Current
Typical RDSon= 12mΩ
applications
High frequency DC-DC converters
UPS and Motor Control
Lead-Free