IXYS SEMICONDUCTOR IXFH12N100F 功率场效应管, MOSFET, N沟道, 12 A, 1 kV, 1.05 ohm, 10 V, 3 V
The is a 1000V N-channel Enhancement Mode Power MOSFET designed for laser driver, induction heating, switch mode power supplies and switching industrial applications.
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- Double metal process for low gate resistance
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- Rugged polysilicon gate cell structure
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- Unclamped Inductive Switching UIS rated
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- Low inductance offers easy to drive and protect
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- Fast intrinsic rectifier
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- Space-saving s
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- High power density
针脚数 3
漏源极电阻 1.05 Ω
极性 N-Channel
耗散功率 300 W
阈值电压 3 V
漏源极电压Vds 1 kV
上升时间 9.8 ns
输入电容Ciss 2700pF @25VVds
下降时间 12 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 300W Tc
安装方式 Through Hole
引脚数 3
封装 TO-3-3
封装 TO-3-3
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
制造应用 电源管理, Industrial, Power Management, 工业
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IXFH12N100F IXYS Semiconductor | 当前型号 | 当前型号 |
STW11NK100Z 意法半导体 | 功能相似 | IXFH12N100F和STW11NK100Z的区别 |
IRFPG30PBF 威世 | 功能相似 | IXFH12N100F和IRFPG30PBF的区别 |