IXFN44N50Q

IXYS SEMICONDUCTOR  IXFN44N50Q  晶体管, MOSFET, HiPerFET, N沟道, 44 A, 500 V, 120 mohm, 10 V, 4 V

N-Channel Enhancement Mode Avalanche Rated, Low Qg , High dv/dt

Features

•IXYS advanced low Qg process

•Low gate charge and capacitances

\- easier to drive

-faster switching

•Unclamped Inductive Switching UIS rated

•Low RDS on

•Fast intrinsic diode

•International standard package

•miniBLOC with Aluminium nitride

isolation for low thermal resistance

•Low terminal inductance <10 nH and

stray capacitance to heatsink <35pf

•Molding epoxies meet UL 94 V-0

flammability classification