IXYS SEMICONDUCTOR IXTQ100N25P 晶体管, MOSFET, 极性FET, N沟道, 100 A, 250 V, 27 mohm, 10 V, 5 V
The is a PolarHT™ N-channel enhancement-mode standard Power MOSFET offers reduced static drain-to-source ON-resistance and high power density.
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- International standard packages
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- Avalanche rating
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- Unclamped inductive switching UIS rating
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- Low package inductance - Easy to drive and to protect
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- Easy to mount
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- Space saving
针脚数 3
漏源极电阻 0.027 Ω
极性 N-Channel
耗散功率 600 W
阈值电压 5 V
输入电容 6300 pF
漏源极电压Vds 250 V
连续漏极电流Ids 100 A
上升时间 26 ns
输入电容Ciss 6300pF @25VVds
额定功率Max 600 W
下降时间 28 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 600W Tc
安装方式 Through Hole
引脚数 3
封装 TO-3-3
封装 TO-3-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
制造应用 电源管理, Power Management
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IXTQ100N25P IXYS Semiconductor | 当前型号 | 当前型号 |
IXTT100N25P IXYS Semiconductor | 完全替代 | IXTQ100N25P和IXTT100N25P的区别 |
IXTQ96N25T IXYS Semiconductor | 类似代替 | IXTQ100N25P和IXTQ96N25T的区别 |
IXFH100N25P IXYS Semiconductor | 功能相似 | IXTQ100N25P和IXFH100N25P的区别 |