IXYS SEMICONDUCTOR IXFN55N50 晶体管, MOSFET, HiPerFET, N沟道, 55 A, 500 V, 80 mohm, 10 V, 4.5 V
The is a single N-channel Power MOSFET with fast intrinsic diode HiPerFET™. It features low static ON-resistance HDMOS™ process and high power density. It is suitable for DC-to-DC converters, battery chargers, DC choppers, switch-mode and resonant-mode power supplies.
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- International standard packages
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- MiniBLOC with aluminium nitride isolation
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- Rugged polysilicon gate cell structure
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- Unclamped inductive switching UIS rating
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- Low package inductance
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- Easy to mount
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- Space saving
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- UL94V-0 Flammability rating
额定功率 600 W
通道数 1
针脚数 3
漏源极电阻 0.08 Ω
极性 N-Channel
耗散功率 600 W
阈值电压 4.5 V
漏源极电压Vds 500 V
漏源击穿电压 500 V
连续漏极电流Ids 55.0 A
上升时间 60 ns
隔离电压 2.50 kV
输入电容Ciss 9400pF @25VVds
额定功率Max 625 W
下降时间 45 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 625W Tc
安装方式 Chassis
引脚数 3
封装 SOT-227-4
封装 SOT-227-4
材质 Silicon
重量 46.0 g
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tube
制造应用 Lighting, 电源管理, Power Management, 照明
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IXFN55N50 IXYS Semiconductor | 当前型号 | 当前型号 |
IXFN180N20 IXYS Semiconductor | 类似代替 | IXFN55N50和IXFN180N20的区别 |
IXTN36N50 IXYS Semiconductor | 类似代替 | IXFN55N50和IXTN36N50的区别 |
IXFN44N60 IXYS Semiconductor | 类似代替 | IXFN55N50和IXFN44N60的区别 |