IXYS SEMICONDUCTOR IXTN60N50L2 晶体管, MOSFET, LINEAR L2™, N沟道, 53 A, 500 V, 100 mohm, 10 V, 2.5 V
底座安装 N 通道 500 V 53A（Tc） 735W（Tc） SOT-227B
得捷:
MOSFET N-CH 500V 53A SOT227B
立创商城:
N沟道 500V 53A
贸泽:
MOSFET 60 Amps 500V
e络盟:
晶体管, MOSFET, LINEAR L2™, N沟道, 53 A, 500 V, 0.1 ohm, 10 V, 2.5 V
艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Ixys Corporation&s;s IXTN60N50L2 power MOSFET can provide a solution. Its maximum power dissipation is 735000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with linear l2 technology.
Verical:
Trans MOSFET N-CH 500V 53A Automotive 4-Pin SOT-227B
Newark:
# IXYS SEMICONDUCTOR IXTN60N50L2 MOSFET Transistor, Linear L2™, N Channel, 53 A, 500 V, 100 mohm, 10 V, 2.5 V
针脚数 4
漏源极电阻 100 mΩ
极性 N-Channel
耗散功率 735 W
阈值电压 2.5 V
漏源极电压Vds 500 V
漏源击穿电压 500 V
上升时间 40 ns
输入电容Ciss 24000pF @25VVds
额定功率Max 735 W
下降时间 38 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 735W Tc
安装方式 Chassis
引脚数 4
封装 SOT-227-4
长度 38.23 mm
宽度 25.42 mm
高度 12.22 mm
封装 SOT-227-4
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
制造应用 照明, Lighting, Power Management, 电源管理
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15