N沟道 500V 60A
Create an effective common drain amplifier using this power MOSFET from Ixys Corporation. Its maximum power dissipation is 960000 mW. This N channel MOSFET transistor operates in enhancement mode. This device is made with linear l2 technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
得捷:
MOSFET N-CH 500V 60A PLUS247-3
立创商城:
N沟道 500V 60A
贸泽:
MOSFET 60 Amps 500V
艾睿:
Trans MOSFET N-CH 500V 60A 3-Pin3+Tab PLUS 247
漏源极电阻 0.1 Ω
极性 N-Channel
耗散功率 960 W
阈值电压 2.5 V
漏源极电压Vds 500 V
漏源击穿电压 500 V
连续漏极电流Ids 60A
上升时间 40 ns
输入电容Ciss 24000 pF
下降时间 38 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 960W Tc
安装方式 Through Hole
引脚数 3
封装 PLUS-247-3
封装 PLUS-247-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15