IKB03N120H2

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IKB03N120H2概述

高速2 -技术具有柔软,快速恢复反并联EMCON何二极管 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode

• Designed for:

   - SMPS

   - Lamp Ballast

   - ZVS-Converter

• 2nd generation HighSpeed-Technology for 1200V applications offers:

   - loss reduction in resonant circuits

   - temperature stable behavior

   - parallel switching capability

   - tight parameter distribution

   - Eoff optimized for IC =3A

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/


立创商城:
IKB03N120H2


安富利:
Trans IGBT Chip N-CH 1.2KV 9.6A 3-Pin TO-263 T/R


Chip1Stop:
Trans IGBT Chip N-CH 1.2KV 9.6A 3-Pin2+Tab TO-263


Verical:
Trans IGBT Chip N-CH 1.2KV 9.6A 3-Pin2+Tab D2PAK


儒卓力:
**IGBT 1200V 9.6A 2.5V TO263-3 **


Win Source:
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode


IKB03N120H2中文资料参数规格
技术参数

击穿电压集电极-发射极 1200 V

反向恢复时间 42 ns

额定功率Max 62.5 W

工作温度Max 150 ℃

工作温度Min -40 ℃

封装参数

安装方式 Surface Mount

引脚数 3

封装 TO-263-3

外形尺寸

长度 10.25 mm

宽度 9.9 mm

高度 4.4 mm

封装 TO-263-3

物理参数

工作温度 -40℃ ~ 150℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

数据手册

IKB03N120H2引脚图与封装图
IKB03N120H2引脚图
IKB03N120H2封装焊盘图
在线购买IKB03N120H2
型号: IKB03N120H2
描述:高速2 -技术具有柔软,快速恢复反并联EMCON何二极管 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode

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