INFINEON IPD180N10N3 G 晶体管, MOSFET, N沟道, 43 A, 100 V, 0.0147 ohm, 10 V, 2.7 V
Summary of Features:
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- Excellent switching performance
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- World’s lowest R DSon
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- Very low Q g and Q gd
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- Excellent gate charge x R DSon product FOM
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- RoHS compliant-halogen free
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- MSL1 rated 2
Benefits:
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- Environmentally friendly
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- Increased efficiency
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- Highest power density
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- Less paralleling required
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- Smallest board-space consumption
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- Easy-to-design products
针脚数 3
漏源极电阻 0.0147 Ω
极性 N-Channel
耗散功率 71 W
阈值电压 2.7 V
漏源极电压Vds 100 V
上升时间 12 ns
输入电容Ciss 1800pF @50VVds
额定功率Max 71 W
下降时间 5 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 71W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.73 mm
宽度 6.22 mm
高度 2.41 mm
封装 TO-252-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Isolated DC-DC converters telecom and datacom systems, Class D audio amplifiers, Or-ing switches and circuit breakers in 48V systems, Uninterruptable power supplies UPS, Synchronous rectification for AC-DC SMPS
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IPD180N10N3 G Infineon 英飞凌 | 当前型号 | 当前型号 |
SUD50N10-18P-E3 威世 | 功能相似 | IPD180N10N3 G和SUD50N10-18P-E3的区别 |