IXYS SEMICONDUCTOR IXGH48N60B3C1 单晶体管, IGBT, SIC, 75 A, 1.8 V, 300 W, 600 V, TO-247, 3 引脚
The is a GenX3™ medium speed PT IGBT with SiC anti-parallel diode. It is optimized for low conduction and switching losses. It is suitable for battery chargers, welding machines and 5 to 40kHz switching applications.
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- Low saturation voltage
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- Square RBSOA
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- Anti-parallel Schottky diode
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- High power density
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- Low gate drive requirement
针脚数 3
耗散功率 300 W
击穿电压集电极-发射极 600 V
额定功率Max 300 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 300 W
安装方式 Through Hole
引脚数 3
封装 TO-247-3
封装 TO-247-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
制造应用 Lighting, Power Management, Maintenance & Repair, Motor Drive & Control
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IXGH48N60B3C1 IXYS Semiconductor | 当前型号 | 当前型号 |
NGTB35N60FL2WG 安森美 | 功能相似 | IXGH48N60B3C1和NGTB35N60FL2WG的区别 |