IS62C5128BL-45QLI

静态随机存取存储器 4Mb 45ns 5V 512K x 8 Async 静态随机存取存储器

The is a 512K x 8-bit high-speed CMOS Static Random Access Memory SRAM organized as 524288 words by 8-bit. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 45ns with low power consumption. When CE is HIGH deselected, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using chip enable and output enable inputs, CE and OE. The active LOW write enable WE controls both writing and reading of the memory. A data byte allows upper byte UB and lower byte LB access.

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Low active power - 50mW typical

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Low standby power - 10µW typical CMOS standby

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TTL compatible interface levels

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Single 5V±10% power supply

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Fully static operation: no clock or refresh required