IXYS SEMICONDUCTOR IXGA30N60C3C1 IGBT Single Transistor, SIC, 60A, 3V, 220W, 600V, TO-263, 3Pins
The is a GenX3™ high-speed PT IGBT with SiC anti-parallel diode. It is optimized for low switching losses. It is suitable for battery chargers, welding machines and 40 to 100kHz switching applications.
耗散功率 220 W
击穿电压集电极-发射极 600 V
额定功率Max 220 W
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 220000 mW
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 9.65 mm
宽度 10.41 mm
高度 4.83 mm
封装 TO-263-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
制造应用 Lighting, Power Management, Maintenance & Repair, Motor Drive & Control
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15