INTEGRATED SILICON SOLUTION ISSI IS43DR16640B-25DBLI 芯片, 存储器, SDRAM, DDR2, 1GB, 1.8V, 84BGA
The is a 1Gb DDR2 SDRAM with 400MHz frequency, DDR2-800D speed grade and 64Mb x 16 organization. For application flexibility, burst length, burst type, CAS# latency, DLL reset function, write recovery time WR are user defined variables and must be programmed with a Mode Register Set MRS command. Additionally, DLL disable function, driver impedance, additive CAS latency, ODT On Die Termination, single-ended strobe and OCD off chip driver impedance adjustment are also user defined variables and must be programmed with an Extended Mode Register Set EMRS command. Contents of the Mode Register MR or Extended Mode Registers EMR[1] and EMR[2] can be altered by re-executing the MRS or EMRS Commands. Even if the user chooses to modify only a subset of the MR, EMR[1] or EMR[2] variables, all variables within the addressed register must be redefined when the MRS or EMRS commands are issued.
供电电流 240 mA
针脚数 84
时钟频率 400 MHz
位数 16
存取时间 400 ps
工作温度Max 85 ℃
工作温度Min -40 ℃
电源电压 1.7V ~ 1.9V
电源电压Max 1.9 V
电源电压Min 1.7 V
安装方式 Surface Mount
引脚数 84
封装 BGA-84
封装 BGA-84
工作温度 -40℃ ~ 85℃
产品生命周期 Active
包装方式 Each
制造应用 工业, 车用, Automotive, Industrial, Commercial, 商业
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
IS43DR16640B-25DBLI Integrated Silicon SolutionISSI | 当前型号 | 当前型号 |
IS43DR16640B-25DBLI-TR Integrated Silicon SolutionISSI | 完全替代 | IS43DR16640B-25DBLI和IS43DR16640B-25DBLI-TR的区别 |
IS43DR16640B-25DBL Integrated Silicon SolutionISSI | 类似代替 | IS43DR16640B-25DBLI和IS43DR16640B-25DBL的区别 |
IS43DR16640A-3DBL Integrated Silicon SolutionISSI | 类似代替 | IS43DR16640B-25DBLI和IS43DR16640A-3DBL的区别 |