DPAK N-CH 40V 50A
表面贴装型 N 通道 50A（Tc） 68W（Tc） PG-TO252-3
得捷:
IPD50N04 - 20V-40V N-CHANNEL AUT
立创商城:
IPD50N04S308ATMA1
艾睿:
This IPD50N04S308ATMA1 power MOSFET from Infineon Technologies can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 68000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 40V 50A 3-Pin2+Tab TO-252
Verical:
Trans MOSFET N-CH 40V 50A Automotive 3-Pin2+Tab DPAK T/R
Win Source:
MOSFET N-CH 40V 50A TO252-3 / N-Channel 40 V 50A Tc 68W Tc Surface Mount PG-TO252-3-11
极性 N-CH
耗散功率 68 W
漏源极电压Vds 40 V
连续漏极电流Ids 50A
上升时间 7 ns
输入电容Ciss 2350pF @25VVds
下降时间 6 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 68W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
封装 TO-252-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tape & Reel TR
制造应用 OptiMOS-T 40V addresses to small loads control switching 3-phase and H-bridge motors, electric pumps, etc. especially in combination with PWM control., Body applications
RoHS标准
含铅标准 Lead Free
ECCN代码 EAR99