IPB120N04S401ATMA1概述
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.00135 ohm, 10 V, 3 V
Summary of Features:
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- N-channel - Enhancement mode
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- AEC qualified
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- MSL1 up to 260°C peak reflow
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- 175°C operating temperature
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- Green Product RoHS compliant
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- 100% Avalanche tested
Benefits:
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- world"s lowest RDS at 40V on
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- highest current capability
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- lowest switching and conduction power losses for highest thermal efficiency
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- robust packages with superior quality and reliability
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- Optimized total gate charge enables smaller driver output stages
IPB120N04S401ATMA1中文资料参数规格
技术参数
针脚数 3
漏源极电阻 0.00135 Ω
极性 N-CH
耗散功率 188 W
阈值电压 3 V
漏源极电压Vds 40 V
连续漏极电流Ids 120A
上升时间 16 ns
输入电容Ciss 14000pF @25VVds
下降时间 36 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 188W Tc
封装参数
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
外形尺寸
封装 TO-263-3
物理参数
工作温度 -55℃ ~ 175℃ TJ
其他
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Thus OptiMOS-T2 40V products based on Infineon’s advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives., OptiMOS-T2 40V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, elec
符合标准
RoHS标准
含铅标准 Lead Free
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