晶体管, MOSFET, N沟道, 90 A, 40 V, 0.0032 ohm, 10 V, 1.7 V
表面贴装型 N 通道 90A（Tc） 71W（Tc） PG-TO252-3-313
欧时:
Infineon IPD90N04S4L04ATMA1
得捷:
MOSFET N-CH 40V 90A TO252-3
立创商城:
N沟道 40V 90A
e络盟:
晶体管, MOSFET, N沟道, 90 A, 40 V, 0.0032 ohm, 10 V, 1.7 V
艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The IPD90N04S4L04ATMA1 power MOSFET from Infineon Technologies provides the solution. Its maximum power dissipation is 71000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
安富利:
Trans MOSFET N-CH 40V 90A 3-Pin2+Tab TO-252
Verical:
Trans MOSFET N-CH 40V 90A Automotive 3-Pin2+Tab DPAK T/R
针脚数 3
漏源极电阻 0.0032 Ω
极性 N-CH
耗散功率 71 W
阈值电压 1.7 V
漏源极电压Vds 40 V
连续漏极电流Ids 90A
上升时间 11 ns
输入电容Ciss 4690pF @25VVds
下降时间 28 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 71W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
封装 TO-252-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 OptiMOS-T 40V addresses to small loads control switching 3-phase and H-bridge motors, electric pumps, etc. especially in combination with PWM control., Body applications
RoHS标准
含铅标准 无铅