IPB50N10S3L16ATMA1

Infineon OptiMOS T 系列 Si N沟道 MOSFET IPB50N10S3L16ATMA1, 50 A, Vds=100 V, 3引脚 D2PAK TO-263封装

OptiMOS™T 功率 MOSFET

OptiMOS™ 产品提供高性能封装，可处理最具挑战性的应用，在有限空间提供全部灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

N 通道 - 增强模式

符合汽车 AEC Q101 规格

MSL1 高达 260°C 峰值回流焊接

175°C 工作温度

绿色产品（符合 RoHS 标准）

得捷:
MOSFET N-CH 100V 50A TO263-3

欧时:
Infineon OptiMOS T 系列 Si N沟道 MOSFET IPB50N10S3L16ATMA1, 50 A, Vds=100 V, 3引脚 D2PAK TO-263封装

e络盟:
功率场效应管, MOSFET, N沟道, 100 V, 50 A, 0.0131 ohm, TO-263 D2PAK, 表面安装

艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The IPB50N10S3L16ATMA1 power MOSFET from Infineon Technologies provides the solution. Its maximum power dissipation is 100000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.

Verical:
Trans MOSFET N-CH 100V 50A Automotive 3-Pin2+Tab D2PAK T/R

Win Source:
MOSFET N-CH 100V 50A TO263-3 / N-Channel 100 V 50A Tc 100W Tc Surface Mount PG-TO263-3-2