DPAK N-CH 700V 7.3A
表面贴装型 N 通道 7.3A(Tc) 63W(Tc) PG-TO252-3
得捷:
MOSFET N-CH 650V 7.3A TO252-3
艾睿:
As an alternative to traditional transistors, the IPD65R600C6BTMA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 63000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes coolmos technology. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 700V 7.3A 3-Pin2+Tab TO-252
TME:
Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Verical:
Trans MOSFET N-CH 650V 7.3A 3-Pin2+Tab DPAK T/R
Win Source:
MOSFET N-CH 650V 7.3A TO252
额定功率 63 W
极性 N-CH
耗散功率 63 W
漏源极电压Vds 700 V
连续漏极电流Ids 7.3A
上升时间 9 ns
输入电容Ciss 440pF @100VVds
下降时间 13 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 63W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
封装 TO-252-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tape & Reel TR
RoHS标准
含铅标准 无铅
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
IPD65R600C6BTMA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
IPD65R600C6 英飞凌 | 类似代替 | IPD65R600C6BTMA1和IPD65R600C6的区别 |