DPAK N-CH 60V 50A
表面贴装型 N 通道 60 V 50A（Tc） 136W（Tc） PG-TO252-3
得捷:
MOSFET N-CH 60V 50A TO252-3
艾睿:
Amplify electronic signals and switch between them with the help of Infineon Technologies&s; IPD127N06LGBTMA1 power MOSFET. Its maximum power dissipation is 136000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with optimos technology.
安富利:
Trans MOSFET N-CH 60V 50A 3-Pin TO-252 T/R
Verical:
Trans MOSFET N-CH 60V 50A 3-Pin2+Tab DPAK T/R
Win Source:
MOSFET N-CH 60V 50A TO-252
额定电压DC 60.0 V
额定电流 50.0 A
极性 N-CH
耗散功率 136 W
输入电容 1.30 nF
栅电荷 69.0 nC
漏源极电压Vds 60 V
连续漏极电流Ids 50.0 A
上升时间 14 ns
输入电容Ciss 2300pF @30VVds
额定功率Max 136 W
下降时间 13 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 136W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.5 mm
宽度 6.22 mm
高度 2.3 mm
封装 TO-252-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Not For New Designs
包装方式 Tape & Reel TR
制造应用 Or-ing switches, Isolated DC-DC converters, Synchronous rectification
RoHS标准
含铅标准 Lead Free