IPP80P03P4L07AKSA1概述
晶体管, MOSFET, P沟道, -80 A, -30 V, 0.0059 ohm, -10 V, -1.5 V
Summary of Features:
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- P-channel - Logic Level - Enhancement mode
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- AEC qualified
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- MSL1 up to 260°C peak reflow
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- 175°C operating temperature
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- Green package RoHS compliant
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- 100% Avalanche tested
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- Intended for reverse battery protection
Benefits:
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- No charge pump required for high side drive
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- Simple interface drive circuit
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- World"s lowest RDSon at 30V
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- Highest current capability
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- Lowest switching and conduction power losses for highest thermal efficiency
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- Robust packages with superior quality and reliability
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- Standard packages TO-252, TO-263, TO-220, TO-262
IPP80P03P4L07AKSA1中文资料参数规格
技术参数
通道数 1
针脚数 3
漏源极电阻 0.0059 Ω
极性 P-CH
耗散功率 88 W
阈值电压 1.5 V
漏源极电压Vds 30 V
连续漏极电流Ids 80A
上升时间 4 ns
输入电容Ciss 5700pF @25VVds
下降时间 60 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 88W Tc
封装参数
安装方式 Through Hole
引脚数 3
封装 TO-220-3
外形尺寸
长度 10 mm
宽度 4.4 mm
高度 15.65 mm
封装 TO-220-3
物理参数
工作温度 -55℃ ~ 175℃ TJ
其他
产品生命周期 Not Recommended for New Designs
包装方式 Tube
制造应用 Bridge configuration could be realized with 30V P-Channels high side device with no need of charge pump, High-Side MOSFETs for motor bridges half-bridges, H-bridges, 3-phase-motors
符合标准
RoHS标准
含铅标准 无铅
在线购买IPP80P03P4L07AKSA1
型号： IPP80P03P4L07AKSA1
制造商：
Infineon
英飞凌
描述：晶体管, MOSFET, P沟道, -80 A, -30 V, 0.0059 ohm, -10 V, -1.5 V