INFINEON IPD65R225C7ATMA1 功率场效应管, MOSFET, N沟道, 11 A, 650 V, 0.199 ohm, 10 V, 3.5 V
The IPD65R225C7 is a 650V CoolMOS™ C7 N-channel Power MOSFET features lower gate charge. The CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junctionSJ principle and pioneered by Technologies. The CoolMOS™ C7 combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super-junction MOSFET offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.
额定功率 63 W
针脚数 3
漏源极电阻 0.199 Ω
极性 N-Channel
耗散功率 63 W
阈值电压 3.5 V
漏源极电压Vds 650 V
连续漏极电流Ids 11A
上升时间 6 ns
输入电容Ciss 996pF @400VVds
下降时间 10 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 63W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
封装 TO-252-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Power Management, Communications & Networking, 工业, Industrial, Alternative Energy, 通信与网络, 替代能源, 电源管理
RoHS标准
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
IPD65R225C7ATMA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
IPD65R250C6XTMA1 英飞凌 | 类似代替 | IPD65R225C7ATMA1和IPD65R250C6XTMA1的区别 |