INFINEON IPD50R280CEATMA1 晶体管, MOSFET, N沟道, 13 A, 550 V, 0.25 ohm, 13 V, 3 V
The IPD50R280CE is a CoolMOS™ N-channel CE Power MOSFET optimized to meet highest efficiency standards. The new series provides all benefits of a fast switching Super-junction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.
For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.
额定功率 92 W
针脚数 3
漏源极电阻 0.25 Ω
极性 N-Channel
耗散功率 92 W
阈值电压 3 V
漏源极电压Vds 550 V
连续漏极电流Ids 13A
上升时间 6.4 ns
输入电容Ciss 773pF @100VVds
下降时间 7.6 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 119W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.5 mm
宽度 6.22 mm
高度 2.3 mm
封装 TO-252-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Obsolete
包装方式 Tape & Reel TR
制造应用 Lighting, Power Management, Consumer Electronics
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
IPD50R280CEATMA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
IPD50R380CE 英飞凌 | 类似代替 | IPD50R280CEATMA1和IPD50R380CE的区别 |
IPD50R280CE 英飞凌 | 类似代替 | IPD50R280CEATMA1和IPD50R280CE的区别 |
IPD50R280CEAUMA1 英飞凌 | 类似代替 | IPD50R280CEATMA1和IPD50R280CEAUMA1的区别 |