IPL60R360P6SATMA1

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IPL60R360P6SATMA1概述

晶体管, MOSFET, N沟道, 11.3 A, 600 V, 0.32 ohm, 10 V, 4 V

Description:

The new CoolMOS™ ThinPAK 5x6 is a leadless SMD package especially designed for high voltage MOSFETs. This new package has a very small footprint of 5x6mm 2 and a very low profile with only 1mm height.

This significantly smaller package size in combination with its benchmark low parasitics inductances can be used as a new and effective way to decrease system solution size in power- density driven designs. The ThinPAK 5x6 package is characterized by a very low source inductance 1.6nH, as well as a similar thermal performance as DPAK.

The package hence enables faster and thus more efficient switching of power MOSFETs and is easier to handle in terms of switching behavior and EMI.

Summary of Features:

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Small footprint 5x6mm²
.
Low profile 1mm
.
Low parasitic inductance
.
RoHS compliant
.
Halogen free mold compound

Benefits:

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Reduced board space consumption
.
Increased power density
.
Short commutation loop
.
Easy to use products
.
Environmentally friendly

Target Applications:

 

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Adapter
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Consumer
.
Lighting
IPL60R360P6SATMA1中文资料参数规格
技术参数

额定功率 89.3 W

通道数 1

针脚数 5

漏源极电阻 360 mΩ

极性 N-CH

耗散功率 89.3 W

阈值电压 4 V

漏源极电压Vds 600 V

漏源击穿电压 600 V

连续漏极电流Ids 11.3A

上升时间 7 ns

输入电容Ciss 1010pF @100VVds

下降时间 7 ns

工作温度Max 150 ℃

工作温度Min 40 ℃

耗散功率Max 89.3W Tc

封装参数

安装方式 Surface Mount

引脚数 8

封装 ThinPAK-56-8

外形尺寸

长度 6 mm

宽度 5 mm

高度 1.1 mm

封装 ThinPAK-56-8

物理参数

工作温度 -40℃ ~ 150℃ TJ

其他

产品生命周期 Obsolete

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买IPL60R360P6SATMA1
型号: IPL60R360P6SATMA1
描述:晶体管, MOSFET, N沟道, 11.3 A, 600 V, 0.32 ohm, 10 V, 4 V

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