晶体管, MOSFET, N沟道, 80 A, 100 V, 0.007 ohm, 10 V, 2.7 V
Summary of Features:
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- Excellent switching performance
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- World’s lowest R DSon
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- Very low Q g and Q gd
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- Excellent gate charge x R DSon product FOM
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- RoHS compliant-halogen free
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- MSL1 rated 2
Benefits:
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- Environmentally friendly
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- Increased efficiency
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- Highest power density
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- Less paralleling required
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- Smallest board-space consumption
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- Easy-to-design products
额定功率 125 W
针脚数 3
漏源极电阻 0.007 Ω
极性 N-Channel
耗散功率 125 W
阈值电压 2.7 V
漏源极电压Vds 100 V
连续漏极电流Ids 80A
上升时间 42 ns
输入电容Ciss 3980pF @50VVds
额定功率Max 125 W
下降时间 8 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 125000 mW
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
封装 TO-252-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Uninterruptable power supplies UPS, Or-ing switches and circuit breakers in 48V systems, Class D audio amplifiers, Synchronous rectification for AC-DC SMPS, Isolated DC-DC converters telecom and datacom systems
RoHS标准
含铅标准 Lead Free
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IPD082N10N3GATMA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
IPD12CN10NGBUMA1 英飞凌 | 类似代替 | IPD082N10N3GATMA1和IPD12CN10NGBUMA1的区别 |