IPP70N10S312AKSA1

Infineon OptiMOS T 系列 Si N沟道 MOSFET IPP70N10S312AKSA1, 70 A, Vds=100 V, 3引脚 TO-220封装

OptiMOS™T 功率 MOSFET

OptiMOS™ 产品提供高性能封装，可处理最具挑战性的应用，在有限空间提供全部灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

N 通道 - 增强模式

符合汽车 AEC Q101 规格

MSL1 高达 260°C 峰值回流焊接

175°C 工作温度

绿色产品（符合 RoHS 标准）

欧时:
Infineon OptiMOS T 系列 Si N沟道 MOSFET IPP70N10S312AKSA1, 70 A, Vds=100 V, 3引脚 TO-220封装

得捷:
MOSFET N-CH 100V 70A TO220-3

e络盟:
晶体管, MOSFET, AEC-Q101, N沟道, 70 A, 100 V, 0.0097 ohm, 10 V, 3 V

艾睿:
Use Infineon Technologies&s; IPP70N10S312AKSA1 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 125000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode.

富昌:
IPP70N10S3 系列 100 V 70 A 11.6 mOhm N-沟道 OptiMOS®-T 功率-晶体管 - TO-220

TME:
Transistor: N-MOSFET; OptiMOS™ T; unipolar; 100V; 48A; 125W

Verical:
Trans MOSFET N-CH 100V 70A Automotive 3-Pin3+Tab TO-220 Tube

Newark:
# INFINEON  IPP70N10S312AKSA1  MOSFET Transistor, N Channel, 70 A, 100 V, 0.0097 ohm, 10 V, 3 V

Win Source:
MOSFET N-CH 100V 70A TO220-3