INFINEON IPD90R1K2C3ATMA1 功率场效应管, MOSFET, N沟道, 5.1 A, 900 V, 1.2 ohm, 10 V, 3 V
表面贴装型 N 通道 900 V 5.1A(Tc) 83W(Tc) PG-TO252-3
得捷:
MOSFET N-CH 900V 5.1A TO252-3
欧时:
Infineon MOSFET IPD90R1K2C3ATMA1
贸泽:
MOSFET N-Ch 900V 5.1A DPAK-2
艾睿:
Thanks to Infineon Technologies, both your amplification and switching needs can be taken care of with one component: the IPD90R1K2C3ATMA1 power MOSFET. Its maximum power dissipation is 83000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This device is made with coolmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
安富利:
Trans MOSFET N-CH 900V 5.1A 3-Pin TO-252 T/R
TME:
Transistor: N-MOSFET; unipolar; 900V; 3.2A; 83W; PG-TO252-3
Verical:
Trans MOSFET N-CH 900V 5.1A 3-Pin2+Tab DPAK T/R
Newark:
# INFINEON IPD90R1K2C3ATMA1 Power MOSFET, N Channel, 5.1 A, 900 V, 1.2 ohm, 10 V, 3 V
Win Source:
MOSFET N-CH 900V 5.1A TO-252
额定功率 83 W
通道数 1
针脚数 3
漏源极电阻 1.2 Ω
极性 N-Channel
耗散功率 83 W
阈值电压 3 V
漏源极电压Vds 900 V
连续漏极电流Ids 5.1A
上升时间 20 ns
输入电容Ciss 710pF @100VVds
额定功率Max 83 W
下降时间 40 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 83W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.5 mm
宽度 6.22 mm
高度 2.3 mm
封装 TO-252-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Industrial, 电源管理, Lighting, 工业, 照明, Consumer Electronics, 消费电子产品, Power Management
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
IPD90R1K2C3ATMA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
IPD90R1K2C3 英飞凌 | 类似代替 | IPD90R1K2C3ATMA1和IPD90R1K2C3的区别 |
SPD03N50C3 英飞凌 | 类似代替 | IPD90R1K2C3ATMA1和SPD03N50C3的区别 |
IPD90R1K2C3BTMA1 英飞凌 | 类似代替 | IPD90R1K2C3ATMA1和IPD90R1K2C3BTMA1的区别 |