IPD80P03P4L07ATMA1

Infineon OptiMOS P 系列 Si P沟道 MOSFET IPD80P03P4L07ATMA1, 80 A, Vds=30 V, 3引脚 DPAK TO-252封装

OptiMOS™P P 通道功率 MOSFET

**Infineon** **OptiMOS**™ P 通道电源 MOSFET 设计用于提供增强功能，以便达到质量指标。 特征包括超低切换损耗、通态电阻、雪崩额定值以及达到汽车解决方案的 AEC 标准。 应用包括：直流-直流、电动机控制、汽车和 eMobility。

增强型模式

雪崩等级

低切换和传导功率损耗

无铅引线电镀；符合 RoHS 标准

标准封装

OptiMOS™ P 通道系列：温度范围为 -55°C 至 +175°C

得捷:
MOSFET P-CH 30V 80A TO252-3

立创商城:
P沟道 30V 80A

欧时:
Infineon OptiMOS P 系列 Si P沟道 MOSFET IPD80P03P4L07ATMA1, 80 A, Vds=30 V, 3引脚 DPAK TO-252封装

贸泽:
MOSFET P-Ch -30V -80A DPAK-2 OptiMOS-P2

e络盟:
晶体管, MOSFET, P沟道, -80 A, -30 V, 0.0056 ohm, -10 V, -1.5 V

艾睿:
This IPD80P03P4L07ATMA1 power MOSFET from Infineon Technologies can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 88000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes optimos technology. This P channel MOSFET transistor operates in enhancement mode.

Win Source:
MOSFET P-CH 30V 80A TO252-3