IPD65R250C6XTMA1

Infineon CoolMOS C6 系列 Si N沟道 MOSFET IPD65R250C6XTMA1, 16 A, Vds=700 V, 3引脚 DPAK TO-252封装

CoolMOS™C6/C7 功率 MOSFET

得捷:
MOSFET N-CH 650V 16.1A TO252-3

欧时:
Infineon CoolMOS C6 系列 Si N沟道 MOSFET IPD65R250C6XTMA1, 16 A, Vds=700 V, 3引脚 DPAK TO-252封装

贸泽:
MOSFET N-Ch 700V 16.1A DPAK-2

e络盟:
功率场效应管, MOSFET, N沟道, 650 V, 16.1 A, 0.23 ohm, TO-252 DPAK, 表面安装

艾睿:
Increase the current or voltage in your circuit with this IPD65R250C6XTMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 208300 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This device is made with coolmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

Chip1Stop:
Trans MOSFET N-CH 700V 16.1A 3-Pin2+Tab TO-252 T/R

TME:
Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208.3W; PG-TO252-3

Verical:
Trans MOSFET N-CH 700V 16.1A 3-Pin2+Tab DPAK T/R