INFINEON IPD90P04P405ATMA1 晶体管, MOSFET, P沟道, -90 A, -40 V, 0.0035 ohm, -10 V, -3 V
OptiMOS™P P 通道功率 MOSFET
**Infineon** **OptiMOS**™ P 通道电源 MOSFET 设计用于提供增强功能,以便达到质量指标。 特征包括超低切换损耗、通态电阻、雪崩额定值以及达到汽车解决方案的 AEC 标准。 应用包括:直流-直流、电动机控制、汽车和 eMobility。
增强型模式
雪崩等级
低切换和传导功率损耗
无铅引线电镀;符合 RoHS 标准
标准封装
OptiMOS™ P 通道系列:温度范围为 -55°C 至 +175°C
得捷:
MOSFET P-CH 40V 90A TO252-3
欧时:
Infineon OptiMOS P 系列 Si P沟道 MOSFET IPD90P04P405ATMA1, 90 A, Vds=40 V, 3引脚 DPAK TO-252封装
立创商城:
P沟道 40V 90A
e络盟:
功率场效应管, MOSFET, P沟道, 40 V, 90 A, 0.0035 ohm, TO-252 DPAK, 表面安装
艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the IPD90P04P405ATMA1 power MOSFET, developed by Infineon Technologies. Its maximum power dissipation is 125000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes optimos technology. This P channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET P-CH 40V 90A 3-Pin2+Tab TO-252
Verical:
Trans MOSFET P-CH 40V 90A Automotive 3-Pin2+Tab DPAK T/R
Newark:
# INFINEON IPD90P04P405ATMA1 MOSFET Transistor, P Channel, -90 A, -40 V, 0.0035 ohm, -10 V, -3 V
Win Source:
MOSFET P-CH 40V 90A TO252-3 / P-Channel 40 V 90A Tc 125W Tc Surface Mount PG-TO252-3-313
通道数 1
针脚数 3
漏源极电阻 0.0035 Ω
极性 P-Channel
耗散功率 125 W
阈值电压 3 V
输入电容 7900 pF
漏源极电压Vds 40 V
连续漏极电流Ids 90A
上升时间 8 ns
输入电容Ciss 10300pF @25VVds
下降时间 14 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 125W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.73 mm
宽度 6.22 mm
高度 2.41 mm
封装 TO-252-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 车用, 电源管理, Bridge configuration could be realized with 40V P-Channel as high side device with no need of charge pump, High-Side MOSFETs for motor bridges half-bridges, H-bridges, 3-phase-motors, 电机驱动与控制, Automotive, Motor Drive & Control, Power Management
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17