IPA65R110CFDXKSA1

晶体管, MOSFET, N沟道, 31.2 A, 700 V, 0.099 ohm, 10 V, 4 V

Summary of Features:

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650V technology with integrated fast body diode

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Limited voltage overshoot during hard commutation

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Significant Q g reduction compared to 600V CFD technology

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Tighter R DSON max to R DSon typ window

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Easy to design-in

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Lower price compared to 600V CFD technology

Benefits:

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Low switching losses due to low Q rr at repetitive commutation on body diode

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Self limiting di/dt and dv/dt

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Low Q oss

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Reduced turn on and turn of delay times

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Outstanding CoolMOS™ quality

Target Applications:

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Telecom

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Server

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Solar

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HID lamp ballast

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LED lighting

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eMobility