TO-251 N-CH 30V 40A
Description:
With the new OptiMOS™ 30V product family, sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package.
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life.
Available in halfbridge configuration power stage 5x6
Summary of Features:
Benefits:
额定功率 42 W
极性 N-Channel
耗散功率 42 W
漏源极电压Vds 30 V
连续漏极电流Ids 40A
上升时间 14 ns
输入电容Ciss 1600pF @15VVds
下降时间 3 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 42W Tc
安装方式 Through Hole
引脚数 3
封装 TO-251-3
封装 TO-251-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tube
制造应用 Mainboard, VRD/VRM, Onboard charger
RoHS标准
含铅标准 无铅
REACH SVHC标准 No SVHC
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
IPS090N03LGAKMA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
IPS135N03LGAKMA1 英飞凌 | 类似代替 | IPS090N03LGAKMA1和IPS135N03LGAKMA1的区别 |
IPS090N03LG 英飞凌 | 功能相似 | IPS090N03LGAKMA1和IPS090N03LG的区别 |
IPS09N03LA 英飞凌 | 功能相似 | IPS090N03LGAKMA1和IPS09N03LA的区别 |