DPAK N-CH 150V 50A
The IPD200N15N3 G is a 150V N-channel Power MOSFET that achieves a reduction in RDS on of 40% and of 45% in Figure of Merit FOM. The OptiMOS™ MOSFET offers high system efficiency and industry"s lowest RDS on within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.
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- Excellent switching performance
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- Environmentally-friendly
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- Increased efficiency
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- Highest power density
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- Less paralleling required
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- Smallest board-space consumption
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- Easy to design
针脚数 3
漏源极电阻 0.016 Ω
极性 N-Channel
耗散功率 150 W
阈值电压 3 V
输入电容 1820 pF
漏源极电压Vds 150 V
连续漏极电流Ids 50A
上升时间 11 ns
输入电容Ciss 1820pF @75VVds
额定功率Max 150 W
下降时间 6 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 150W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.5 mm
宽度 6.22 mm
高度 2.3 mm
封装 TO-252-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Industrial, 电源管理, 工业, Synchronous rectification for AC-DC SMPS, Audio, 电机驱动与控制, Or-ing switches and circuit breakers in 48V systems, Motor Drive & Control, Isolated DC-DC converters telecom and datacom systems, Class D audio amplifiers, 音频, Power Management
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IPD200N15N3GATMA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
IPD200N15N3GBTMA1 英飞凌 | 完全替代 | IPD200N15N3GATMA1和IPD200N15N3GBTMA1的区别 |
IPD25CN10NGBUMA1 英飞凌 | 类似代替 | IPD200N15N3GATMA1和IPD25CN10NGBUMA1的区别 |
FDD86250 飞兆/仙童 | 功能相似 | IPD200N15N3GATMA1和FDD86250的区别 |