INFINEON IPD60R385CPATMA1 功率场效应管, MOSFET, N沟道, 9 A, 650 V, 0.35 ohm, 10 V, 3 V
表面贴装型 N 通道 9A(Tc) 83W(Tc) PG-TO252-3
得捷:
MOSFET N-CH 600V 9A TO252-3
立创商城:
N沟道 600V 9A
贸泽:
MOSFET N-Ch 600V 9A DPAK-2
e络盟:
晶体管, MOSFET, N沟道, 9 A, 650 V, 0.35 ohm, 10 V, 3 V
艾睿:
Compared to traditional transistors, IPD60R385CPATMA1 power MOSFETs, developed by Infineon Technologies, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 83000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes coolmos technology.
安富利:
Trans MOSFET N-CH 600V 9A 3-Pin TO-252 T/R
Verical:
Trans MOSFET N-CH 600V 9A 3-Pin2+Tab DPAK T/R
Newark:
# INFINEON IPD60R385CPATMA1 Power MOSFET, N Channel, 9 A, 650 V, 0.35 ohm, 10 V, 3 V
Win Source:
MOSFET N-CH 600V 9A TO-252
通道数 1
针脚数 3
漏源极电阻 0.35 Ω
极性 N-Channel
耗散功率 83 W
阈值电压 3 V
漏源极电压Vds 600 V
漏源击穿电压 600 V
连续漏极电流Ids 9A
上升时间 5 ns
输入电容Ciss 790pF @100VVds
额定功率Max 83 W
下降时间 5 ns
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 83W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.5 mm
宽度 6.22 mm
高度 2.3 mm
封装 TO-252-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tape & Reel TR
制造应用 工业, Alternative Energy, Industrial, Communications & Networking, 电源管理, Power Management, 通信与网络, 替代能源, 消费电子产品, Consumer Electronics
RoHS标准 RoHS Compliant
含铅标准 无铅
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
IPD60R385CPATMA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
IPD60R385CPBTMA1 英飞凌 | 类似代替 | IPD60R385CPATMA1和IPD60R385CPBTMA1的区别 |