IPD60R600P6ATMA1

IPD60R600P6ATMA1图片1
IPD60R600P6ATMA1图片2
IPD60R600P6ATMA1概述

IPD60R600P6ATMA1 编带

Summary of Features:

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Reduced gate charge Q g
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Higher V th
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Good body diode ruggedness
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Optimized integrated R g
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Improved dv/dt from 50V/ns
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CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology

Benefits:

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Improved effciency especially in light load condition
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Better efficiency in soft switching applications due to earlier turn-off
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Suitable for hard- & soft-switching topologies
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Optimized balance of efficiency and ease of use and good controllability of switching behavior
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High robustness and better efficiency
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Outstanding quality & reliability
IPD60R600P6ATMA1中文资料参数规格
技术参数

极性 N-CH

耗散功率 63 W

漏源极电压Vds 600 V

连续漏极电流Ids 7.3A

上升时间 7 ns

输入电容Ciss 557pF @100VVds

下降时间 14 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 63W Tc

封装参数

安装方式 Surface Mount

引脚数 3

封装 TO-252-3

外形尺寸

封装 TO-252-3

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

制造应用 PFC stages for, PWM stages TTF, LLC for, , telecom rectifier,

符合标准

RoHS标准

含铅标准 无铅

海关信息

ECCN代码 EAR99

数据手册

在线购买IPD60R600P6ATMA1
型号: IPD60R600P6ATMA1
描述:IPD60R600P6ATMA1 编带
替代型号IPD60R600P6ATMA1
型号/品牌 代替类型 替代型号对比

IPD60R600P6ATMA1

Infineon 英飞凌

当前型号

当前型号

IPD60R600P6

英飞凌

类似代替

IPD60R600P6ATMA1和IPD60R600P6的区别

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