晶体管, MOSFET, N沟道, 15 A, 650 V, 0.115 ohm, 10 V, 3.5 V
表面贴装型 N 通道 650 V 15A(Tc) 102W(Tc) PG-VSON-4
得捷:
MOSFET N-CH 650V 15A 4VSON
欧时:
Infineon MOSFET IPL65R130C7AUMA1
立创商城:
N沟道 650V 15A
贸泽:
MOSFET N-Ch 650V 15A VSON-4
e络盟:
晶体管, MOSFET, N沟道, 15 A, 650 V, 0.115 ohm, 10 V, 3.5 V
艾睿:
Thanks to Infineon Technologies, both your amplification and switching needs can be taken care of with one component: the IPL65R130C7AUMA1 power MOSFET. Its maximum power dissipation is 102000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -40 °C and a maximum of 150 °C. This device is made with coolmos technology. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 650MinV 15A 4-Pin VSON T/R
TME:
Transistor: N-MOSFET; unipolar; 650V; 15A; 102W; PG-VSON-4
Verical:
Trans MOSFET N-CH 650V 15A 4-Pin VSON EP T/R
额定功率 102 W
通道数 1
针脚数 4
漏源极电阻 115 mΩ
极性 N-CH
耗散功率 102 W
阈值电压 3.5 V
漏源极电压Vds 650 V
漏源击穿电压 650 V
连续漏极电流Ids 15A
上升时间 5.3 ns
输入电容Ciss 1670pF @400VVds
下降时间 12 ns
工作温度Max 150 ℃
工作温度Min -40 ℃
耗散功率Max 102W Tc
安装方式 Surface Mount
引脚数 4
封装 PG-VSON-4
长度 8 mm
宽度 8 mm
高度 1.1 mm
封装 PG-VSON-4
工作温度 -40℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 无铅