DPAK N-CH 100V 67A
Make an effective common gate amplifier using this power MOSFET from Technologies. Its maximum power dissipation is 125000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos 2 technology.
极性 N-Channel
耗散功率 125 W
漏源极电压Vds 100 V
连续漏极电流Ids 67A
上升时间 21 ns
输入电容Ciss 4320pF @50VVds
下降时间 8 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 125W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
封装 TO-252-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Obsolete
包装方式 Tape & Reel TR
RoHS标准
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IPD12CN10NGBUMA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
IPD082N10N3GATMA1 英飞凌 | 类似代替 | IPD12CN10NGBUMA1和IPD082N10N3GATMA1的区别 |