DPAK N-CH 100V 35A
If you need to either amplify or switch between signals in your design, then Technologies" power MOSFET is for you. Its maximum power dissipation is 71000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.
通道数 1
漏源极电阻 19 mΩ
极性 N-CH
耗散功率 71 W
阈值电压 2 V
漏源极电压Vds 100 V
漏源击穿电压 100 V
连续漏极电流Ids 35A
上升时间 4 ns
输入电容Ciss 2070pF @50VVds
下降时间 3 ns
工作温度Max 175 ℃
工作温度Min 55 ℃
耗散功率Max 71W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.5 mm
宽度 6.22 mm
高度 2.3 mm
封装 TO-252-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Obsolete
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IPD25CN10NGBUMA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
IPD200N15N3GATMA1 英飞凌 | 类似代替 | IPD25CN10NGBUMA1和IPD200N15N3GATMA1的区别 |
IPD25CN10NGATMA1 英飞凌 | 类似代替 | IPD25CN10NGBUMA1和IPD25CN10NGATMA1的区别 |