晶体管, MOSFET, N沟道, 10.6 A, 600 V, 0.34 ohm, 10 V, 3 V
Description:
CoolMOS™ E6 combines "s experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler.
Summary of Features:
Benefits:
Target Applications:
额定功率 83 W
针脚数 3
漏源极电阻 0.34 Ω
极性 N-CH
耗散功率 83 W
阈值电压 3 V
漏源极电压Vds 600 V
连续漏极电流Ids 10.6A
上升时间 9 ns
输入电容Ciss 700pF @100VVds
下降时间 8 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 83W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Rail, Tube
RoHS标准 RoHS Compliant
含铅标准 无铅