IPB017N10N5ATMA1

晶体管, MOSFET, N沟道, 180 A, 100 V, 0.0015 ohm, 10 V, 3 V

Summary of Features:

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Optimized for synchronous rectification

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Ideal for high switching frequency

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Output capacitance reduction of up to 44% 

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R DSon reduction of up to 43% from previous generation

Benefits:

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Highest system efficiency

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Reduced switching and conduction losses

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Less paralleling required

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Increased power density

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Low voltage overshoot

Target Applications:

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Telecom

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Server

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Solar

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Low voltage drives

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Light electric vehicles

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Adapter