IGB20N60H3

Trans IGBT Chip N-CH 600V 40A 3Pin TO-263 T/R

Summary of Features:

.

Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz

.

Low switching losses for high efficiency

.

Excellent V cesat behavior thanks to the famous TRENCHSTOP™ technology

.

Fast switching behavior with low EMI emissions

.

Optimized diode for target applications, meaning further improvement in switching losses

.

Low gate resistor selection possible down to 5Ω whilst maintaining excellent switching behaviour

.

Short circuit capability

.

Offering T jmax of 175°C

.

Packaged with and without freewheeling diode for increased design freedom

Benefits:

.

Excellent cost/performance

.

Low switching and conduction losses

.

Very good EMI behavior

.

A small gate resistor for reduced delay time and voltage overshoot

.

Smaller die sizes -> smaller packages

.

Best-in-class IGBT efficiency and EMI behavior