IPD048N06L3GBTMA1

Infineon OptiMOS 3 系列 Si N沟道 MOSFET IPD048N06L3GBTMA1, 90 A, Vds=60 V, 3引脚 DPAK TO-252封装

OptiMOS™3 功率 MOSFET，60 至 80V

OptiMOS™ 产品提供高性能封装，可处理最具挑战性的应用，在有限空间提供全部灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

快速切换 MOSFET，用于 SMPS

优化技术，用于直流/直流转换器

符合目标应用的 JEDEC1 规格

N 通道，逻辑电平

极佳的栅极电荷 x R DSon 产品 FOM

极低导通电阻 R DSon

无铅电镀

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET IPD048N06L3GBTMA1, 90 A, Vds=60 V, 3引脚 DPAK TO-252封装

得捷:
MOSFET N-CH 60V 90A TO252-3

贸泽:
MOSFET MV POWER MOS

艾睿:
Compared to traditional transistors, IPD048N06L3GBTMA1 power MOSFETs, developed by Infineon Technologies, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 115000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.

TME:
Transistor: N-MOSFET; unipolar; 60V; 90A; 115W; PG-TO252-3

Verical:
Trans MOSFET N-CH 60V 90A 3-Pin2+Tab DPAK T/R