IPW60R330P6FKSA1概述
晶体管, MOSFET, N沟道, 12 A, 600 V, 0.297 ohm, 10 V, 4 V
Summary of Features:
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- Reduced gate charge Q g
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- Higher V th
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- Good body diode ruggedness
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- Optimized integrated R g
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- Improved dv/dt from 50V/ns
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- CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology
Benefits:
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- Improved effciency especially in light load condition
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- Better efficiency in soft switching applications due to earlier turn-off
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- Suitable for hard- & soft-switching topologies
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- Optimized balance of efficiency and ease of use and good controllability of switching behavior
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- High robustness and better efficiency
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- Outstanding quality & reliability
IPW60R330P6FKSA1中文资料参数规格
技术参数
通道数 1
针脚数 3
漏源极电阻 297 mΩ
极性 N-CH
耗散功率 93 W
阈值电压 3.5 V
漏源极电压Vds 600 V
漏源击穿电压 600 V
连续漏极电流Ids 12A
上升时间 7 ns
输入电容Ciss 1010pF @100VVds
下降时间 7 ns
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 93W Tc
封装参数
安装方式 Through Hole
引脚数 3
封装 TO-247-3
外形尺寸
长度 16.13 mm
宽度 5.21 mm
高度 21.1 mm
封装 TO-247-3
物理参数
工作温度 -55℃ ~ 150℃ TJ
其他
产品生命周期 Not Recommended for New Designs
包装方式 Tube
制造应用 PWM stages TTF, LLC for, PFC stages for, , telecom rectifier,
符合标准
RoHS标准 RoHS Compliant
含铅标准 Lead Free
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